The test chip shown above has been fabricated in 180 nm UMC process. It consists of three different transceiver architectures of on-chip interconnect. The summary of the achievements of the test chip are:
- The current-mode differential coded transceiver achieved a speed of 9.25 Gb/s for a 5 mm long interconnect with an energy efficiency of 1.24 pJ/b. [Link]
- Full-duplex transceiver achieved a speed of 4.0 Gb/s for an energy efficiency of 0.95 pJ/b for 5 mm long interconnect. [Link]
- The transceiver for bus interconnect achieved a speed of 3.0 Gb/s for communication for an interconnect length of 4 mm.
The test chip shown above has been fabricated in 180 nm National Semiconductor process. It consists of low power current-mode receiver for on-chip interconnect. It was tested up to a data rate of 2.5 Gb/s for a global interconnect length of 10 mm. [Link]